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Groupe Arnaud Electronics

Freiberger Compound Materials start industrial production of SC and SI 100 mm low-EPD VGF GaAs wafers

Based on excellent experience in the growth of d-shaped horizontal Bridgeman GaAs, Freiberger started the development of a new small temperature gradient VGF growth process for low-EPD, 100 mm SI and SC GaAs in 1998.

Today, this new technology has reached a level allowing its introduction into regular mass production, including the manufacturing of substrates.

8 December 1999


Related Products
Gallium arsenide (semi-insulating and semi-conducting)
Polycrystalline GaAs

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