Highest integrity analysis of thin-film chemical composition to the European semiconductor and material industry.
In Rutherford Backscattering Spectrometry, a high energy beam of He++ ions (energy > 2 MeV) is partly backscattered by the near surface region of the sample. These ions are analysed by a solid state detector. Both composition and depth distribution of elements in the sample can be deduced. Also, quantitative measurement of crystal damage can be obtained.
- Advanced RBS (Rutherford Backscattering Spectrometry) of almost any solid material
- Surface analysis and depth profiling
- High sensitivity, extreme dynamic concentration range
- High depth resolution and ultimate mass separation
- Can measure trace elements undetected by other techniques
- Both imaging modes: ion microscope and ion microprobe
Although its sensitivity is not comparable to that of SIMS, RBS provides very valuable complementary informations:
Service provided by Probion.
- Direct quantitative analysis ( no standards needed) with detection limits down to 0.1% for heavy impurities in light matrices
- Crystalline damage measurement in crystals
- Analysis of non-conducting organic or inorganic solids and powders