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Groupe Arnaud Electronics

SIMS Analysis

  • Advanced SIMS (Secondary Ion Mass Spectrometry) of almost any solid material
  • Surface analysis and depth profiling
  • High sensitivity, extreme dynamic concentration range
  • High depth resolution and ultimate mass separation
  • Can measure trace elements undetected by other techniques
  • Both imaging modes: ion microscope and ion microprobe
More than 20 years ago, Castaing and Slodzian developed an instrument combining ionic sputtering and magnetic mass spectrometry: a primary energetic ion beam sputters the sample surface. Secondary ions are generated in this sputtering process and are extracted from the sample. They are then analysed by a mass spectrometer. Thus SIMS (Secondary Ion Mass Spectrometry) was born.

It is unrivaled for its detection limits:

  • Excellent depth resolution (to within a few per cent)
  • Full periodic table coverage (including hydrogen)
  • Rapid ion image acquisition capabilities
Dynamic SIMS, with a magnetic sector, combines almost all possible requirements:

Sensitivity:

Traces, as well as major elements, can be measured simultaneously with this instrument. A 6-decade dynamic range on concentration is routinely available.

Depth Resolution

Quantum wells a few nanometers thick can easily be resolved in depth profiling.

Mass Resolution

Often, elements or molecules have similar masses and interfere in analysis. High mass resolution clarifies these situations. Extreme high mass resolution is obtained with our set-up.

Samples:

  • Analysed area for profiles: Ø60 to 8 micrometres
  • Sample size 0.5 x 0.5 mm2 to Ø50 mm
  • Chips can be analysed even after processing
SIMS Principle

Quantitative profiling:

The semiconductor community is very fond of the data provided by this operating mode. Indeed, it gives most required information on their structures:Impurity concentrations down to the residual range (1.E 14 cm-3 to 1.E 16 cm-3) depending on the elements and matrix), with excellent depth resolution (down to the nanometer range)


Ion Microscope:

The lateral distribution of the ions happens to be maintained through the spectrometer so that the mass resolved image of the secondary ions can be projected onto a detection channel plate or, alternatively, on a resistive anode encoder (RAE). The sample is illuminated by a large diameter beam. An elemental image, with submicron lateral resolution can thus be recorded with an image field from 50 to 250 Ám and a detection limit in the ppm range.

Ion Microprobe:
Ion microprobe
In the ion microprobe mode, the primary ion beam is microfocused down to a small size (the smaller the size, the smaller the beam intensity ). The intensity of a CRT screen is modulated by the collected signal. Synchronization with the primary beam raster provides an elemental image, analogous to a Scanning Electron Microscope image. This mode provides highly sensitive images of traces over areas up to 0.5 mm x 0.5 mm. The primary ions used, O2 or Cs, give high ionization efficiency, and are suitable for low-concentration mapping.
Sample requirements:
  • Size: less than 5 cm in diameter, 80.8 cm in thickness
  • Chips can be analysed (post processing analysis, reverse engineering...)
  • Conducting and insulating

Analytical results are returned within five business days, with analysis in less than 24 hours available upon special request. Complete security is guaranteed with respect to the analysis of materials. The service includes a full report and E-mailed data.

For further information please use the Fast Quotation form.

Service provided by Probion.

Fast Quotation


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