Gallium arsenide Semi-insulating and semi-conducting GaAs wafers in 2", 3", 100 mm and 150 mm (SI only) diameter. Freiberger Compound Materials offers: Single and double side polished wafers Low and high pressure LEC growth technology Comprehensive crystal and wafer characterization Bulk material with extremely low residual impurity concentration Controlled carbon level for different resistivity ranges Highest uniformity of electrical parameters for ion-implantation Excellent surface quality for epitaxial growth process (MBE, MOCVD) Laser-marking Notch option for larger wafer diameters Quick order turn-around Polycrystalline gallium arsenide also available. Manufactured by Freiberger Compound Materials.

GaP GaSb Gallium MBE Thin films and oxide layers Ion implants Etching