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Groupe Arnaud Electronics

Gallium phosphide

Single Crystal Ingots and Wafers

Gallium phosphide is used for the manufacture of red and green diodes, among other technologies.

Crystalline Structure: Cubic Density: 4.18
Melting Point: 1480°C Refractive Index: 3.37
Lattice Constant: 5.45 A° Thermal Conductivity: 1.1 w/cm °C
Energy Gap: 2.4 e.V.

Dopant Diameter EPD cm-2 Carrier Concentration cm-3 Mobility cm2/V.s
S/n-Type 50.8-76.2 mm <2 x 105 1-15 x 1017
5-20 x 1017
80-130
80-110
Te/n-Type 50.8-76.2 mm <2 x 105 1-7 x 1017 100-140
Zn/p-Type 50.8-76.2 mm <2 x 105 1-20 x 1017 50-80
Undoped/n-Type 50.8-76.2 mm <2 x 105 2-5 x 1016 110-160

  • Growth Direction: (111) by LEC
  • Orientations: (100) and (111)
  • Lapped Polished
  • Cr Doping also available
  • Wafers to SEMI-A or SEMI-B Standards
  • Our production facilities are ready to produce to your specifications
  • Custom Epitaxy
Polycrystalline gallium phosphide also available.
Fast Quotation


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GaSb
Gallium MBE
Phosphorus MBE

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