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Gallium phosphide
Single Crystal Ingots and Wafers
Gallium phosphide is used for the manufacture of red and green
diodes, among other technologies.
| Crystalline Structure: |
Cubic |
Density: |
4.18 |
| Melting Point: |
1480°C |
Refractive Index: |
3.37 |
| Lattice Constant: |
5.45 A° |
Thermal Conductivity: |
1.1 w/cm °C |
| Energy Gap: |
2.4 e.V. |
|
| Dopant |
Diameter |
EPD cm-2 |
Carrier Concentration cm-3 |
Mobility cm2/V.s |
| S/n-Type |
50.8-76.2 mm |
<2 x 105 |
1-15 x 1017
5-20 x 1017 |
80-130
80-110 |
| Te/n-Type |
50.8-76.2 mm |
<2 x 105 |
1-7 x 1017 |
100-140 |
| Zn/p-Type |
50.8-76.2 mm |
<2 x 105 |
1-20 x 1017 |
50-80 |
| Undoped/n-Type |
50.8-76.2 mm |
<2 x 105 |
2-5 x 1016 |
110-160 |
- Growth Direction: (111) by LEC
- Orientations: (100) and (111)
- Lapped Polished
- Cr Doping also available
- Wafers to SEMI-A or SEMI-B Standards
- Our production facilities are ready to produce to your specifications
- Custom Epitaxy
Polycrystalline gallium phosphide also available. |
GaSb
Gallium MBE
Phosphorus MBE
Thin films and oxide layers
Ion implants
Etching
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