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Groupe Arnaud Electronics

Gallium antimonide

Single Crystal Wafers

GaSb is a semiconductor used in the production of optoelectronic devices such as lasers, LEDs, and photoreceivers.

Dopant Diameter EPD cm-2 Carrier concentration cm-3 Mobility cm2/V.s
Si or Ge/P Type 50.8 ± 0.3 mm <5 x 103 3 x 1017­19 2 x 102
Te/N Type 50.8 ± 0.3 mm <5 x 103 1 x 1017-18 3 x 103
Undoped/P Type 50.8 ± 0.3 mm <5 x 103 =<2 x 1016 2 x 103

  • Growth Direction: (111) by LEC
  • Orientations: (100), (111) with Off Orientation
  • Surface Finish: As-cut, Lapped/Etched or Polished (1 or 2 sides)
  • Custom Finish: Epitaxy Quality
  • Flats: To SEMI-A or SEMI-B standards
  • Thickness: >450 µm ± 20 µm

Polycrystalline gallium antimonide also available.

 

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