Gallium antimonide Single Crystal Wafers GaSb is a semiconductor used in the production of optoelectronic devices such as lasers, LEDs, and photoreceivers. Dopant Diameter EPD cm-2 Carrier concentration cm-3 Mobility cm2/V.s Si or Ge/P Type 50.8 ± 0.3 mm <5 x 103 3 x 1017­19 2 x 102 Te/N Type 50.8 ± 0.3 mm <5 x 103 1 x 1017-18 3 x 103 Undoped/P Type 50.8 ± 0.3 mm <5 x 103 =<2 x 1016 2 x 103 Growth Direction: (111) by LEC Orientations: (100), (111) with Off Orientation Surface Finish: As-cut, Lapped/Etched or Polished (1 or 2 sides) Custom Finish: Epitaxy Quality Flats: To SEMI-A or SEMI-B standards Thickness: >450 µm ± 20 µm Polycrystalline gallium antimonide also available.

GaAs GaP Gallium MBE High purity metals Thin films and oxide layers Ion implants Etching