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Groupe Arnaud Electronics

Germanium

High purity germanium crystals

Crystals are produced from very pure starting material. The material is purified by using zone refining in graphite and quartz boats, then grown into large single crystals using the Czochralski method.

Specification
Growth process CZ
Diameter, mm 40-100
Length, mm as needed
Orientation <100>
Net impurity < (3-5) x 1010
Mobility, cm2/V.s 3.5 x 104
EPD, cm-2 5 x 102 - 5 x 103

Doped germanium single crystals

Standard Specifications

Dopant

Range of specific resistivity, nominal value, ohm.cm

EPD (no more than), cm-2

Range of ingot diameter, mm

Length (not more than), mm

Sb

15-45

5 x 103

28-35

50

Sb

6-14

5 x 103 - 5 x 104

28-35

50

Sb

0.1-5.5

5 x 103 - 1 x 104

28-35

50

Sb

0.01-0.09

2 x 103 - 5 x 104

20-35

40

Sb

0.004-0.009

5 x 104

20-35

40

Ga

15-45

5 x 103

28-35

50

Ga

6-14

5 x 103

28-35

50

Ga

0.1-5.5

5 x 103 - 1 x 104

28-35

50

Ga

0.01-0.09

2 x 103 - 5 x 104

20-35

40

Ga

0.004-0.009

5 x 103 - 5 x 104

20-35

40

Ga

0.002-0.003

5 x 103 - 5 x 104

20-35

40

Ga

0.00045-0.001

5 x 104

20-35

40

P

0.01-0.1

5 x 103

20-35

40

Deviation of diameter along an ingot does not exceed 4 mm. Orientation <111>.

Fast Quotation

Services
Thin films and oxide layers
Ion implants
Etching

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