 |
Indium arsenide
Single crystal wafers
| Melting Point: |
943°C |
Lattice Constant: |
6.06 A° |
| Absorption Edge: |
3.7 µ |
Energy Gap: |
0.42 ev |
| Density: |
5.66 g/cc |
Dielectric Constant: |
14.0 |
| Refractive Index: |
3.42 |
|
|
| Dopant |
Diameter
mm |
EPD cm-2 |
Carrier concentration cm-3 |
Mobility cm2/V.sec |
| Sn/N-Type |
25 - 50.8 |
2 x 103-4 |
5 x 1016-18 |
- |
| S/N-Type |
25 - 50.8 |
2 x 103-4 |
5 x 1016-18 |
- |
| Zn/P-Type |
25 - 50.8 |
2 x 103-4 |
5 x 1016-19 |
- |
| Mn/P-Type |
25 - 50.8 |
2 x 103-4 |
5 x 1016-19 |
- |
| Undoped/N-Type |
25 - 50.8 |
5 x 103-4 |
1-3 x 1016-18 |
3-4 x 104 |
- Growth Direction: (111) by LEC
- Orientations: (100), (111) ±0.5°
- Surface Finish: As-cut, Lapped/Etched or Polished (1 or 2 sides)
- Custom Finish: Epitaxy Quality
- Flats: To SEMI-A or SEMI-B standards
- Thickness: >= 400 microns ± 20 microns
Polycrystalline indium arsenide also available. |
InP
InSb
Indium MBE
Arsenic MBE
Thin films and oxide layers
Ion implants
Etching
|
