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Groupe Arnaud Electronics

Indium arsenide

Single crystal wafers

Melting Point: 943°C Lattice Constant: 6.06 A°
Absorption Edge: 3.7 µ Energy Gap: 0.42 ev
Density: 5.66 g/cc Dielectric Constant: 14.0
Refractive Index: 3.42    

Dopant Diameter mm EPD cm-2 Carrier concentration cm-3 Mobility cm2/V.sec
Sn/N-Type 25 - 50.8 2 x 103-4 5 x 1016-18 -
S/N-Type 25 - 50.8 2 x 103-4 5 x 1016-18 -
Zn/P-Type 25 - 50.8 2 x 103-4 5 x 1016-19 -
Mn/P-Type 25 - 50.8 2 x 103-4 5 x 1016-19 -
Undoped/N-Type 25 - 50.8 5 x 103-4 1-3 x 1016-18 3-4 x 104

  • Growth Direction: (111) by LEC
  • Orientations: (100), (111) ±0.5°
  • Surface Finish: As-cut, Lapped/Etched or Polished (1 or 2 sides)
  • Custom Finish: Epitaxy Quality
  • Flats: To SEMI-A or SEMI-B standards
  • Thickness: >= 400 microns ± 20 microns
Polycrystalline indium arsenide also available.
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Related Products
InP
InSb
Indium MBE
Arsenic MBE

Services
Thin films and oxide layers
Ion implants
Etching

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