 |
Indium phosphide
Single crystal wafers
| |
 2" |
3"
|
| Geometry |
| Diameter |
50.0 or 50.8 ± 0.3 mm |
76.2 ± 0.4 mm |
| Thickness |
350 ± 20 µm |
620 ± 25 µm |
| Orientation |
(100) exact or off ± 0.05° |
(100) exact or off ± 0.05° |
| Flats |
EJ |
EJ or US |
| OF (011) ± 0.02° |
16 ± 2 mm |
22 ± 2 mm |
| IF (011) ± 1° |
8 ± 2 mm |
11 ± 2 mm |
| Surface finish |
one or double side polished |
one or double side polished |
| TTV, LTV (1) |
< 5 µm |
5-10 µm |
| Bow, warp |
< 10 µm |
< 10 µm |
| Laser marking (2) |
upon request |
upon request |
| packaging |
individual container under N2 |
individual container under N2 |
| Bulk |
| - EPD |
|
Fe, Sn
|
< 30 000 |
< 50 000 |
|
S, Zn
|
< 500 |
< 500 (70% area) |
| - X ray Diffraction |
|
Fe, Sn
|
15 ± 2 arc sec |
16 ± 4 arc sec |
|
S, Zn
|
12 ± 1arc sec |
12 ± 1arc sec |
| Surface |
Particulates
(diameter > 0.3 µm) |
< 100 |
< 100 |
| Contaminations |
|
all metallic
elements
|
≈ 0 |
≈ 0 |
|
Si content
|
< 2 1011/cm2 |
< 2 1011/cm2 |
(1)
TTV: distance between the highest and the lowest point of the surface
LTV: distance between the highest and the lowest point of the surface
in a field of special area (15x15mm2).
in both cases, clamped wafer (with vacuum)
(2)
Laser Marking
Characterization tools
| SPECIFICATION |
METHOD |
| Electrical |
| Carrier concentration, mobility |
Hall Effect |
| Resistivity |
Sonogage |
| Bulk |
| EPD |
Huber etch, microscope or mapping |
| Strain, slip lines |
X-ray difraction mapping, IR test |
| Residual impurities |
GDMS, SIMS |
| Geometry |
| Thickness |
Sonogage, micrometer |
| Orientation |
X-ray Goniometer |
| TTV, bow |
Laser scanning flatness tester |
| Surface |
| Overall surface inspection |
Interference Contrast Microscope |
| Roughness |
Laser Interferometric Microscope |
| Particulates, hazyness |
Particulates Counter |
| Residual impurities/Surface contamination |
TOF-SIMS |
| CRYSTAL DOPANT |
ELECTRICAL PROPERTIES |
DISLOCATION DENSITY
(2")
|
Carrier conc.
(cm-3) |
Mobility
(cm2 / v.s.) |
EPD / guaranteed
(/cm2) |
| undoped (n) |
2 - 5 1015 |
4000 - 4600 |
< 30000 |
| iron (Fe) |
 >
107 .cm |
N/A |
< 30000 |
| tin (Sn) |
1- 5 1018 |
1300 - 2100 |
< 30000 |
| sulphur (S) |
3 - 10 1018 |
1300 - 1600 |
< 500 |
| zinc (Zn) |
3 - 5 1018 |
50 - 60 |
< 500 |
Database
As part of our Statistical Process Control / Total Quality Management
Program, extensive database recording the electrical and mechanical properties
for every ingot as well as crystal quality and surface analyses of wafers
are available.
4" wafers starting manufacture.
Polycrystalline indium phosphide also
available.
| Manufactured by |
 |
|
InAs
InSb
Indium MBE
Phosphorus MBE
Thin films and oxide layers
Ion implants
Etching
|
