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Groupe Arnaud Electronics

Indium phosphide

Single crystal wafers

 
2"
3"
     Geometry
Diameter 50.0 or 50.8 ± 0.3 mm 76.2 ± 0.4 mm
Thickness 350 ± 20 µm 620 ± 25 µm
Orientation (100) exact or off ± 0.05° (100) exact or off ± 0.05°
Flats EJ EJ or US
OF (011) ± 0.02° 16 ± 2 mm 22 ± 2 mm
IF (011) ± 1° 8 ± 2 mm 11 ± 2 mm
Surface finish one or double side polished one or double side polished
TTV, LTV (1) < 5 µm 5-10 µm
Bow, warp < 10 µm < 10 µm
Laser marking (2) upon request upon request
packaging individual container under N2 individual container under N2
     Bulk
- EPD  
Fe, Sn
< 30 000 < 50 000
S, Zn
< 500 < 500 (70% area)
- X ray Diffraction  
Fe, Sn
15 ± 2 arc sec 16 ± 4 arc sec
S, Zn
12 ± 1arc sec 12 ± 1arc sec
     Surface
Particulates
     (diameter > 0.3 µm)
< 100 < 100
Contaminations  
all metallic elements
≈ 0 ≈ 0
Si content
< 2 1011/cm2 < 2 1011/cm2

(1)
TTV: distance between the highest and the lowest point of the surface
LTV: distance between the highest and the lowest point of the surface in a field of special area (15x15mm2).
in both cases, clamped wafer (with vacuum)

(2)
Laser Marking

Characterization tools

     SPECIFICATION      METHOD
Electrical
Carrier concentration, mobility Hall Effect
Resistivity Sonogage
Bulk 
EPD Huber etch, microscope or mapping
Strain, slip lines X-ray difraction mapping, IR test
Residual impurities GDMS, SIMS
Geometry
Thickness Sonogage, micrometer
Orientation X-ray Goniometer
TTV, bow Laser scanning flatness tester
Surface
Overall surface inspection Interference Contrast Microscope
Roughness Laser Interferometric Microscope
Particulates, hazyness Particulates Counter
Residual impurities/Surface contamination TOF-SIMS

CRYSTAL DOPANT  ELECTRICAL PROPERTIES
DISLOCATION DENSITY
(2")
Carrier conc.
(cm-3)
Mobility
(cm2 / v.s.)
EPD / guaranteed
(/cm2)
undoped (n) 2 - 5 1015 4000 - 4600 < 30000
iron (Fe) > 107.cm N/A < 30000
tin (Sn) 1- 5 1018 1300 - 2100 < 30000
sulphur (S) 3 - 10 1018 1300 - 1600 < 500
zinc (Zn) 3 - 5 1018 50 - 60 < 500

Database

As part of our Statistical Process Control / Total Quality Management Program, extensive database recording the electrical and mechanical properties for every ingot as well as crystal quality and surface analyses of wafers are available.
4" wafers starting manufacture.

Polycrystalline indium phosphide also available.

 

Fast Quotation


Related Products
InAs
InSb
Indium MBE
Phosphorus MBE

Services
Thin films and oxide layers
Ion implants
Etching

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