Indium antimonide Single crystal wafers For infra-red detectors Formula InSb Crystal Structure Polygonal Density, g/cm 5.8 Melting Point, °C 523 Lattice, Constant, A° 6.48 Energy Gap, e.v. 0.17 Refractive Index 3.96 Dielectric Constant 15.9 Standard Specifications: N-Type Dopant EPD cm-2 Carrier concentration cm-3 (77K) Mobility cm2/V.sec (77K) None <2 x 103 8 x 1014 >6 x 105 Te <5 x 103 2 ­ 3 x 1014-15 >2 x 105 Standard Specifications: P-Type Dopant EPD cm-2 Carrier concentration cm-3 (77K) Ge <5 x 103 >1 x 1013-18 Mn <5 x 103 >1 x 1013-18 Orientations: (100) & (111) with off-orientations upon requuest Surface Finish: As-cut, Lapped/Etched or Polished (1 or 2 sides) Diameters: 50.8 ± 0.3 mm Thickness: >= 450 microns ± 20 microns Polycrystalline indium antimonide also available.

InP InAs Indium MBE High purity metals Thin films and oxide layers Ion implants Etching