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Groupe Arnaud Electronics

Indium antimonide

Single crystal wafers

For infra-red detectors

Formula InSb Crystal Structure Polygonal
Density, g/cm 5.8 Melting Point, °C 523
Lattice, Constant, A° 6.48 Energy Gap, e.v. 0.17
Refractive Index 3.96 Dielectric Constant 15.9

Standard Specifications: N-Type

Dopant EPD cm-2 Carrier concentration cm-3 (77K) Mobility cm2/V.sec (77K)
None <2 x 103 8 x 1014 >6 x 105
Te <5 x 103 2 ­ 3 x 1014-15 >2 x 105

Standard Specifications: P-Type

Dopant EPD cm-2 Carrier concentration cm-3 (77K)
Ge <5 x 103 >1 x 1013-18
Mn <5 x 103 >1 x 1013-18

  • Orientations: (100) & (111) with off-orientations upon requuest
  • Surface Finish: As-cut, Lapped/Etched or Polished (1 or 2 sides)
  • Diameters: 50.8 ± 0.3 mm
  • Thickness: >= 450 microns ± 20 microns
Polycrystalline indium antimonide also available.
Fast Quotation


Related Products
InP
InAs
Indium MBE
High purity metals

Services
Thin films and oxide layers
Ion implants
Etching

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