|GaAs, InP reclaim
III/V Reclaim removes all layers and polishes the surface using chemo-mechanical single-side processes. The following cleaning steps result in a thin homogeneous oxide. A final inspection for defects ensures a continuously high level of quality. Our wafers can be used in epitaxy directly without any additional pretreatment.
Total removal in our reclaim process is at least 10 microns depending on incoming geometry, damage depth and in case of small volume orders the thickness variation of the wafers.
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