High
Purity InP Polycrystal
An ideal material for single crystal growth
Method:
Synthesized by High Pressure Furnace.
Dimension (standard):
Diameter: 50mm
Max. length: 100mm |
Diameter: 75mm
Max. length: 150mm |
Grain size:
Approx. 5-10mm² (typical)
Electrical Property:
| Carrier Concentration.... |
3 × 1015 - 1 × 1016cm-3 |
| Mobility......................... |
3700 - 4500cm2/v.s. |
Impurity:
Typical Glow Discharge Mass Spectrographic
| Element |
ppb at |
Element |
ppb at |
Element |
ppb at |
Element |
ppb at |
Element |
ppb at |
| Li |
23 |
Ca |
<5 |
Y |
<0.1 |
Ba |
<0.1 |
Hf |
<0.1 |
| Be |
<1 |
Sc |
<0.1 |
Zr |
<0.1 |
La |
<0.1 |
Ta * |
<50 |
| B |
1.3 |
Ti |
<0.1 |
Nb |
<5 |
Ce |
<0.1 |
W |
<0.2 |
| F |
<2 |
Fe |
0.17 |
Mo |
<0.5 |
Pr |
<0.3 |
Re |
<0.1 |
| Na |
<1 |
Co |
<0.1 |
Ru |
<0.1 |
Nd |
<0.3 |
Os |
<0.1 |
| Mg |
4.5 |
Ni |
<0.2 |
Rh |
<0.1 |
Sm |
<0.3 |
Ir |
<0.1 |
| Al |
0.16 |
Cu |
5.7 |
Pd |
<0.7 |
Eu |
<3 |
Pt |
<0.2 |
| Si |
15 |
Zn |
20 |
Ag |
<5 |
Gd |
<0.3 |
Au |
<2 |
| P |
Matrix |
Ga |
30 |
Cd |
<5 |
Tb |
<0.1 |
Hg |
<0.5 |
| S |
48 |
Ge |
<1 |
In |
Matrix |
Dy |
<0.3 |
Tl |
<0.1 |
| Cl |
3.1 |
As |
30 |
Sn |
<1 |
Ho |
<0.1 |
Pb |
<0.1 |
| K |
<2 |
Se |
<3 |
Sb |
<0.3 |
Er |
<0.3 |
Bi |
<0.1 |
| Ca |
<5 |
Br |
<5 |
Te |
<0.3 |
Tm |
<0.1 |
Th |
<0.05 |
| Sc |
<0.1 |
Rb |
<0.1 |
I |
<0.1 |
Yb |
<0.3 |
U |
<0.05 |
| Ti |
<0.1 |
Sr |
<0.1 |
Cs |
<5 |
Lu |
<0.1 |
|
|
Note: * ion source material
Note: Electrical properties are measured on the ingot basis.
Please complete the Fast Quotation form to receive datasheets for High
Purity InP Polycrystal.
Manufactured by Camelot.
|
