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Groupe Arnaud Electronics

High Purity InP Polycrystal
An ideal material for single crystal growth

Method:
Synthesized by High Pressure Furnace.

Dimension (standard):
Diameter: 50mm
Max. length: 100mm     
Diameter: 75mm
Max. length: 150mm

Grain size:
Approx. 5-10mm² (typical)

Electrical Property:
Carrier Concentration.... 3 × 1015 - 1 × 1016cm-3
Mobility......................... 3700 - 4500cm2/v.s.

Impurity:
Typical Glow Discharge Mass Spectrographic

 
Element ppb at Element ppb at Element ppb at Element ppb at Element ppb at
Li 23 Ca <5 Y <0.1 Ba <0.1 Hf <0.1
Be <1 Sc <0.1 Zr <0.1 La <0.1 Ta * <50
B 1.3 Ti <0.1 Nb <5 Ce <0.1 W <0.2
F <2 Fe 0.17 Mo <0.5 Pr <0.3 Re <0.1
Na <1 Co <0.1 Ru <0.1 Nd <0.3 Os <0.1
Mg 4.5 Ni <0.2 Rh <0.1 Sm <0.3 Ir <0.1
Al 0.16 Cu 5.7 Pd <0.7 Eu <3 Pt <0.2
Si 15 Zn 20 Ag <5 Gd <0.3 Au <2
P Matrix Ga 30 Cd <5 Tb <0.1 Hg <0.5
S 48 Ge <1 In Matrix Dy <0.3 Tl <0.1
Cl 3.1 As 30 Sn <1 Ho <0.1 Pb <0.1
K <2 Se <3 Sb <0.3 Er <0.3 Bi <0.1
Ca <5 Br <5 Te <0.3 Tm <0.1 Th <0.05
Sc <0.1 Rb <0.1 I <0.1 Yb <0.3 U <0.05
Ti <0.1 Sr <0.1 Cs <5 Lu <0.1    

Note: * ion source material

Note: Electrical properties are measured on the ingot basis.

Please complete the Fast Quotation form to receive datasheets for High
Purity InP Polycrystal.

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